CJAB35N03 Datasheet, PDF (3/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

Typical Characteristics
120
V_GS= 10V
100
80
60
Output Characteristics
V_GS= 5V
Pulsed
V_GS= 4.5V
V_GS= 4.0V
40
V_GS= 3.5V
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
DRAIN TO SOURCE VOLTAGE V_DS (V)
12
11 ^Ta^=25℃
Pulsed
10
9
8
7
6
5
4
3
2
1
0
0
2
4
R
DS(ON)
——
I
D
V_GS=4.5V
V_GS=10V
6
8
10
12
14
16
18
20
DRAIN CURRENT I_D (A)
200
Pulsed
100
I
S
——
V
SD
10
T_a=100℃
T_a=25℃
1
0.1
0.01
0
200
400
600
800
1000
SOURCE TO DRAIN VOLTAGE V_SD (mV)
1200
Transfer Characteristics
120
Pulsed Duration=80us
Duty Cycle=0.5%MAX
100
V_DD=5V
80
T_a=25℃
60
40
20
0
0
1
2
3
4
5
6
GATE TO SOURCE VOLTAGE V_GS (V)
R_DS(ON)——
V
GS
20
18
Pulsed
I_D=12A
16
14
12
10
T_a=100℃
8
6
4
T_a=25℃
2
0
3
4
5
6
7
8
9
10
GATE TO SOURCE VOLTAGE V_GS (V)
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
25
Threshold Voltage
I_D=250uA
50
75
100
125
JUNCTION TEMPERATURE T_J (℃)
www.cj-elec.com
3
A-6,Oct,2016