CJAB35N03 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFN:%3.3×3.3-8L Plastic-Encapsulate MOSFETS
CJAB35N03
V_(BR)DSS
30 V
N-Channel Power MOSFET
R_DS(on)MAX
I_D
7mΩ@10V
12mΩ@4.5V
35A
PDFN:%3.3×3.3-8L
DESCRIPTION
The CJAB35N03 uses advanced trench technology and design
to provide excellent R_DS(ON) with low gate charge. It can be used in a
wide variety of applications
FEATURES
 High density cell design for ultra low R_DS(ON)
 Fully characterized avalanche voltage and
 Excellent package for good heat dissipation
 Special process technology for high ESD
current
 Good stability and uniformity with high E_AS
APPLICATIONS
capability
 High side switch in POL DC/DC converter
MARKING
 Secondary side synchronous rectifier
EQUIVALENT CIRCUIT
CJAB35N03 = Part No.
D
D
D
D
8
7
6
5
Solid dot=Pin1 indicator
XXX=Date Code
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
1
2
3
4
S
S
S
G
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID(1)
Pulsed Drain Current
Single Pulsed Avalanche Energy
IDM
EAS(2)
Power Dissipation
Thermal Resistance from Junction to Ambient
PD
RθJA(1)
Junction Temperature
TJ
Storage Temperature Range
Tstg
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
(1).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
(2).EAS condition: VDD=15V,L=0.1mH, RG=25Ω, Starting TJ = 25°C
Limit
30
±20
35
120
150
1.5
83.3
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
www.cj-elec.com
1
A-6,Oct,2016