CJ2102 Datasheet, PDF (3/5 Pages) ZP Semiconductor – SOT-323 Plastic-Encapsulate MOSFETS

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Output Characteristics
20
T =25℃ V =4V,5V
a
GS
18 Pulsed
V =3V
GS
16
14
V =2.5V
GS
12
10
8
V =2V
GS
6
4
2
V =1.5V
GS
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DRAIN TO SOURCE VOLTAGE V (V)
DS
14
V =3V
DS
12
Pulsed
10
Transfer Characteristics
T =25℃
a
T =100℃
a
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
GATE TO SOURCE VOLTAGE V (V)
GS
100
T =25℃
a
90 ^Pulsed
R
DS(ON)
——
I
D
80
V =2.5V
GS
70
60
50
V =4.5V
GS
40
30
1.0
1.5
2.0
2.5
3.0
3.5
4.0
DRAIN CURRENT I (A)
D
300
250
200
150
100
50
0
0
R
DS(ON)
——
V
GS
Pulsed
I =3.6A
D
T =100℃
a
T =25℃
a
1
2
3
4
5
GATE TO SOURCE VOLTAGE V (V)
GS
3
Pulsed
1
I
S
——
V
SD
T =100℃
a
0.1
T =25℃
a
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
SOURCE TO DRAIN VOLTAGE V (V)
SD
www.cj-elec.com
1.4
3
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
Threshold Voltage
I =250uA
D
50
75
100
JUNCTION TEMPERATURE T (℃)
j
125
C,Apr,2015