CJ2102 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-323 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate MOSFETS
CJ2102
V_(BR)DSS
20 V
N-Channel MOSFET
R_DS(on)MAX
68mΩ@4.5V
115mΩ@2.5V
FEATURE
z TrenchFET Power MOSFET
I_D
2.1A
SOT-323
1. GATE
2. SOURCE
3. DRAIN
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
MARKING
Equivalent Circuit
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source-Drain Current(Diode Conduction)
Power Dissipation
Thermal Resistance from Junction to Ambient (t≤5s)
Operating Junction
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_S
P_D
R_θJA
T_J
T_STG
Value
20
±8
2.1
0.6
0.2
625
150
-55 ~+150
Unit
V
A
W
℃/W
℃
www.cj-elec.com
1
C,Apr,2015