2N4401 Datasheet, PDF (3/5 Pages) NXP Semiconductors – NPN switching transistor

Typical Characteristics
250
COMMON
EMITTER
200 ^Ta=25ć
150
100
Static Characteristic
1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
50
0
0
1000
0.2mA
I_B=0.1mA
1
2
3
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V
—— I
CEsat
C
1000
h ——
FE
I
C
COMMON EMITTER
T =100ć
a
V =1V
CE
300
T =25ć
a
100
30
10
0.1
0.3
1
3
10
30
100
600
COLLECTOR CURRENT I (mA)
C
V
—— I
1.0
BEsat
C
300
100
T_a=100ć
T =25ć
a
30
10
1
3
10
30
100
COLLECTOR CURRENT I (mA)
C
I —— V
C
BE
600
COMMON EMITTER
V =1V
CE
T =100ć
a
100
ȕ=10
600
30
T =25ć
a
10
3
1
0.2
0.4
0.6
0.8
1.0
BASE-EMITTER VOLTAGE V_BE (V)
1000
f
T
——
I
C
COMMON EMITTER
V =10V
CE
T =25ć
a
300
100
10
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30
COLLECTOR CURRENT I (mA)
C
100

0.8
T =25ć
a
0.6
T_a=100ć
0.4
1
100
10
3
10
30
100
COLLECTOR CURRENT I (mA)
C
ȕ=10
600
C / C —— V / V
ob ib
CB EB
Cib
f=1MHz
I =0/I =0
E
C
T =25ć
a
Cob
1
0.1
750
625
500
375
250
125
0
0
0.3
1
3
10
20
REVERSE BIAS VOLTAGE V (V)
P —— T
C
a
25
50
75
100
125
150
AMBIENT TEMPERATURE T (ć)
a
($XJ