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| 2N4401 Datasheet, PDF (2/5 Pages) NXP Semiconductors – NPN switching transistor | |||
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(/(&75,&$/ &+$5$&7(5,67,&6
Ta=25 Я unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Delay time
Rise time
Storage time
Fall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
hFE(4)
hFE(5)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
td
tr
tS
tf
Test conditions
IC=100ÈA , IE=0
IC= 1mA , IB=0
IE=100ÈA, IC=0
VCB=35V, IE=0
VEB=5V, IC=0
VCE=1V, IC= 0.1mA
VCE=1V, IC=1mA
VCE=1V, IC= 10mA
VCE=1V, IC=150mA
VCE=2V, IC= 500mA
IC=150 mA, IB=15mA
IC=500 mA, IB=50mA
IC=150 mA, IB=15mA
IC=500 mA, IB=50mA
VCE= 10V, IC= 20mA,
f=100MHz
VCB=10V, IE= 0,
f=100KHz
VCC=30V, VBE(OFF)=2V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA
IB1=-IB2= 15mA
MLQ MD[ UQLW
60
V
40
V
6
V
0.1
ÈA
0.1
ÈA
20
40
80
100 300
40
0.4
V
0.75
V
0.95
V
1.2
V
250
MHz
6.5
pF
15
nV
20
nV
225
nV
30
nV
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