MMBT3906 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP switching transistor

Typical Characteristics
-100
-80
-60
-40
-20
-0
-0
-500
-300
Static Characteristic
-500uA
-450uA
COMMON
EMITTER
T =25℃
a
-400uA
-350uA
-300uA
-250uA
-200uA
-150uA
-100uA
I =-50uA
B
-4
-8
-12
-16
-20
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V
CEsat
——
I_C
T =100℃
a
-100
T =25℃
a
-30
-10
-1
-3
-10
-30
COLLECTOR CURRENT I (mA)
C
-100
I_C —— V_BE
COMMON EMITTER
V =-1V
CE
-30
T =100℃
a
-10
β=10
-100
-200
-3
T =25℃
a
-1
-0.3
-0.1
-0.2
600
-0.4
-0.6
-0.8
-1.0
-1.2
BASE-EMITTER VOLTAGE
V (V)
BE
f —— I
T
C
V =-20V
CE
T =25℃
a
400
200
-1
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-3
-10
-30
-50
COLLECTOR CURRENT I (mA)
C
2
300
h_FE
——
I
C
COMMON EMITTER
T =100℃
a
V =-1V
CE
200
T =25℃
a
100
0
-0.1
-1.2
-0.3
-1
-3
-10
-30 -100 -200
COLLECTOR CURRENT I (mA)
C
V
BEsat
——
I
C
T =25℃
a
-0.8
T =100℃
a
-0.4
-0.0
-1
9
3
-3
-10
-30
COLLECTOR CURRENT I (mA)
C
C / C —— V / V
ob ib
CB EB
C
ob
β=10
-100
-200
f=1MHz
I =0/I =0
E
C
T =25℃
a
C
ib
1
-0.1
250
-0.3
-1
-3
REVERSE VOLTAGE V (V)
P_C —— T_a
-10
-20
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
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