MMBT3906 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP switching transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
JC(T
MMBT3906
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
SOT–23
FEATURES
z As complementary type, the NPN transistor
MMBT3904 is Recommended
z Epitaxial planar die construction
MARKING: 2A
MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)
1. BASE
2. EMITTER
3. COLLECTOR
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
Rθ_JA
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal resistance junction to ambient
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-0.2
0.2
625
150
-55~+150
Units
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay Time
Rise Time
Storage Time
Fall Time
CLASSIFICATION OF h_FE(1)
HFE
RANK
RANGE
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_CEX
I_EBO
h_FE1
h_FE2
h_FE3
V_CE(sat)1
V_BE(sat)
f_T
td
tr
ts
tf
Test conditions
I_C=-10μA, I_E=0
I_C= -1mA, I_B=0
I_E= -10μA, I_C=0
V_CB= -40 V, I_E=0
V_CE=-30V, V_BE(off)=-3V
V_EB= -5V, I_C=0
V_CE=-1V, I_C= -10mA
V_CE= -1V, I_C=-50mA
V_CE= -1V, I_C=-100mA
I_C=-50mA, I_B=-5mA
I_C= -50mA, I_B=-5mA
V_CE=-20V,I_C=-10mA,f=100MHz
V_CC=-3V,V_BE=-0.5V
I_C=-10mA, I_B1=I_B2=-1mA
V_CC=-3V,I_C=-10mA
I_B1=I_B2=-1mA
MIN
-40
-40
-5
100
60
30
300
MAX
-100
-50
-100
300
-0.3
-0.95
35
35
225
75
L
100–200
100-300
H
200–300
UNIT
V
V
V
nA
nA
nA
V
V
MHz
nS
nS
nS
nS
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