MMBT2907 Datasheet, PDF (2/4 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

Typical Characteristics
Static Characteristic
-200
-900uA _-810uA
COMMON
-720uA
EMITTER
-630uA
T =25℃
a
-150
-540uA
-450uA
-100
-360uA
-50
-0
-0
-1000
-270uA
-180uA
I =-90uA
B
-5
-10
-15
-20
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V
——
CEsat
I
C
400
300
200
100
0
-1
-1200
h ——
FE
T =100℃
a
I
C
COMMON EMITTER
V = -10V
CE
T =25℃
a
-10
-100
-600
COLLECTOR CURRENT I (mA)
C
V —— I
BEsat
C
-100
-10
-1
-600
-100
T =100 ℃
a
T =25℃
a
-10
-100
COLLECTOR CURREMT I (mA)
C
I ——
C
V
BE
β=10
-600
-900
-600
-300
-1
100
T =25℃
a
T =100 ℃
a
-10
-100
COLLECTOR CURREMT I (mA)
C
C /C ——
ob ib
V /V
CB EB
C
ib
β=10
-600
f=1MHz
I =0/I =0
E
C
T =25 ℃
a
-10
-1
-0.1
-0
500
COMMON EMITTER
V = -10V
CE
-300
-600
-900
BASE-EMMITER VOLTAGE V (mV)
BE
-1200
f ——
T
I
C
400
300
200
-0
www.cj-elec.com
V =-20V
CE
T =25 oC
a
-10
-20
-30
-40
-50
COLLECTOR CURRENT I (mA)
C
-60
2
10
C
ob
1
-0.1
300
250
200
150
100
50
0
0
-1
-10
-20
REVERSE VOLTAGE V (V)
P —— T
C
a
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
CA,JOucnt,2014