MMBT2907 Datasheet, PDF (1/4 Pages) Samsung semiconductor – PNP (GENERAL PURPOSE TRANSISTOR)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
MMBT2907
SOT-23 Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
SOT-23
FEATURES
z Epitaxial planar die construction
z Complementary NPN Type available(MMBT2222)
Marking: M2B
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
V_CBO
V_CEO
V_EBO
I_C
P_D
R_θJA
T_J
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature
-60
-40
-5
-600
250
500
150
-55 to +150
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V_(BR)CBO I_C=-10μA,I_E=0
Collector-emitter breakdown voltage
V_(BR)CEO* I_C=-10mA,I_B=0
Emitter-base breakdown voltage
V_(BR)EBO I_E=-10μA,I_C=0
Collector cut-off current
I_CBO
V_CB=-50V,I_E=0
Base cut-off current
I_EBO
V_EB=-3V, I_C =0
Collector cut-off current
I_CEX
V_CE=-30 V, V_BE(off) =-0.5V
h_FE(1)*
V_CE=-10V,I_C=-150mA
DC current gain
h_FE(2)*
V_CE=-10V,I_C=-0.1mA
h_{FE(3) *}
V_CE=-10V,I_C=-500mA
Collector-emitter saturation voltage
V_CE(sat)*
V_CE(sat)*
I_C=-150mA,I_B=-15mA
I_C=-500mA,I_B=-50mA
Base-emitter saturation voltage
V_BE(sat)*
V_BE(sat)*
I_C=-150mA,I_B=-15mA
I_C=-500mA,I_B=-50mA
Transition frequency
f_T
V_CE=-20V,I_C=-50mA,f=100MHz
Delay time
Rise time
t_d
t_r
V_CE=-30V,I_C=-150mA,_B1=-15mA
Storage time
Fall time
t_S
V_CE=-6V,I_C=-150mA,
t_f
I_B1=- I_B2=- 15mA
*Pulse test: t_p≤300μs, δ≤0.02.
Min
-60
-40
-5
100
52
32
200
Typ Max Unit
V
V
V
-20
nA
-10
nA
-50
nA
300
-0.4
-0.67
-1
-1.2
10
25
225
60
V
V
V
V
MHz
ns
ns
ns
ns
www.cj-elec.com
1
CA,JOucnt,2014