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| FMMDT5451 Datasheet, PDF (2/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR | |||
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5551 ELECTRICAL CHARACTERISTICSï¼Tamb=25â unless otherwise specifiedï¼
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFEï¼1ï¼
hFEï¼2ï¼
hFEï¼3ï¼
VCEsat
VBEsat
fT
Cob
NF
Test conditions
Ic=100µA,IE=0
Ic=1mA, IB=0
IE= 10µA, IC=0
VCB= 120V IE=0
VEB= 4V, IC=0
VCE= 5 V, IC= 1 mA
VCE= 5 V, IC = 10 mA
VCE= 5 V, IC= 50 mA
IC= 10 mA, IB= 1 mA
IC= 50 mA, IB= 5 mA
IC= 10 mA, IB= 1 mA
IC= 50 mA, IB= 5 mA
VCE=10V,IC=10mA,,f=100MHz
VCB=10V,IE=0,f=1MHz
VCE=5V,Ic=0.2mA,
f=1KHZ,Rg=1kâ¦
MIN TYP MAX UNIT
180
V
160
V
6
V
50
nA
50
nA
80
80
250
30
0.15
V
0.2
1
V
1
100
300 MHz
6
pF
8
dB
5401 ELECTRICAL CHARACTERISTICS (Tamb=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Noise Figure
Symbol Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
NF
IC=-100µA , IE=0
IC= -1mA , IB=0
IE=-10µA, IC=0
VCB=-120 V , IE=0
VEB=-3V , IC=0
VCE=-5 V, IC= -1mA
VCE=-5 V, IC= -10mA
VCE=-5 V, IC= -50mA
IC=-10 mA, IB=-1mA
IC=-50 mA, IB=-5mA
IC= -10 mA, IB=-1mA
IC= -50 mA, IB=-5mA
VCE= -10V, IC= -10mA
f = 100MHz
VCB=-10V, IE= 0,f=1MHz
VCE= -5.0V, IC= -200µA,
RS= 10â¦,f = 1.0kHz
MIN
-160
-150
-5
50
60
50
TYP MAX UNIT
V
V
V
-0.05 µA
-0.05 µA
240
-0.2
V
-0.5
V
-1
V
-1
V
100
300 MHz
6
pF
8.0 dB
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