FMMDT5451 Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Transistors
FMMDT5451 TRANSISTOR
DESCRIPTION
PNP and NPN Epitaxial Silicon Transistor
WBFBP-06C
(2×2×0.5)
unit: mm
FEATURES
z Complementary Pair
z One 5551-Type NPN, One 5401-Type PNP
1
z Ultra-Small Surface Mount Package
APPLICATION
Ideal for Medium Power Amplification and Switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: KNM
KNM
E1,B1,C1=NPN 5551 Section
E2,B2,C2=PNP 5401 Section
5551 MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current -Continuous
P_C
RθJA
Collector Dissipation
Thermal Resistance, Junction to Ambient
T_J
Junction Temperature
T_stg
Storage Temperature range
5401 MAXIMUM RATINGS* T_A=25℃ unless otherwise noted
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
RθJA
T_J
T_stg
Parameter
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature range
Value
180
160
6
0.2
0.15
625
150
-55-150
Value
-160
-150
-5
-0.2
0.15
625
150
-55-150
Units
V
V
V
A
W
K/W
℃
℃
Units
V
V
V
A
W
K/W
℃
℃