EMZ1 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Epitaxial Planar

TR1 NPN ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ
Collector-base breakdown voltage
V_(BR)CBO I_C=50μA,I_E=0
60
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA,I_B=0
50
Emitter-base breakdown voltage
V_(BR)EBO I_E=50μA,I_C=0
7
Collector cut-off current
I_CBO
V_CB=60V,I_E=0
Emitter cut-off current
I_EBO
V_EB=7V,I_C=0
DC current gain
h_FE
V_CE=6V,I_C=1mA
120
Collector-emitter saturation voltage
V_CE(sat) I_C=50mA,I_B=5mA
Transition frequency
f_T
V_CE=12V,I_C=2mA,f=100MHz
180
Collector output capacitance
C_ob
V_CB=12V,I_E=0,f=1MHz
TR2 PNP ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Max Unit
V
V
V
0.1
μA
0.1
μA
560
0.4
V
MHz
3.5
pF
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=-50μA,I_E=0
V_(BR)CEO I_C=-1mA,I_B=0
V_(BR)EBO I_E=-50μA,I_C=0
I_CBO
V_CB=-60V,I_E=0
I_EBO
V_EB=-6V,I_C=0
h_FE
V_CE=-6V,I_C=-1mA
V_CE(sat) I_C=-50mA,I_B=-5mA
f_T
V_CE=-12V,I_C=-2mA,f=100MHz
C_ob
V_CB=-12V,I_E=0,f=1MHz
Min
Typ Max Unit
-60
V
-50
V
-6
V
-0.1 μA
-0.1 μA
120
560
-0.5
V
140
MHz
5
pF
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