|
EMZ1 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Epitaxial Planar | |||
|
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMZ1 Dual Transistors (NPN+PNP)
FEATURES
ï¬ 2SC2412 and 2SA1037 are housed independently in a package
ï¬ Transistor elements independent, eliminating interference
ï¬ Mounting cost and area can be cut in half
0$5.,1*=
SOT-563
Z1
TR1 NPN and TR2 PNP Absolute Maximum Ratings (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
PC
Collector Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient
TJ
Junction Temperature
Tstg
Storage Temperature Range
*120mW per element must not be exceeded
Value
TR1
TR2
60
-60
50
-50
7
-6
150
-150
150(Total)*
833
150
-55~+150
Unit
V
V
V
mA
mW
â/W
â
â
wwwww.wcj.-cejl-eecle.cco.cmom
1
D,Sep,2016
|
▷ |