CJS6562 Datasheet, PDF (2/6 Pages) ZP Semiconductor – Plastic-Encapsulate Transistors

MOSFET ELECTRICAL CHARACTERISTICS
T_a=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Static
Gate-Threshold Voltage
VGS(th)
VDS =V_GS, ID =250µA
VDS =V_GS, ID =-250µA
N-Ch
P-Ch
Gate-Body Leakage
I_GSS
VDS =0V, VGS =±12V
N-Ch
P-Ch
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-Resistance^a
I_DSS
I_D(on)
RDS(on)
VDS =20V, VGS =0V
VDS =-20V, VGS =0V
VDS =20V, VGS =0V ,T_J=55℃
VDS =-20V, VGS =0V ,T_J=55℃
VDS≥5V, VGS =4.5V
VDS≥-5V, VGS =-4.5V
VGS =4.5V, ID =4.5A
VGS =-4.5V, ID =-3.5A
VGS =2.5V, ID =3.9A
VGS =-2.5V, ID =-2.7A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Forward Transconductance^a
VDS =10V, ID =4.5A
g_fs
VDS =-10V, ID =-3.5A
N-Ch
P-Ch
Diode Forward Voltage^a
Dynamic^b
I_S=1.25A,V_GS=0V
V_SD
I_S=-1.25A,V_GS=0V
N-Ch
P-Ch
Total Gate Charge
Q_g
N-Channel
N-Ch
P-Ch
Gate-Source Charge
Gate-Drain Charge
VDS =15V,VGS =4.5V,ID =4.5A N-Ch
Q_gs
P-Channel
P-Ch
VDS =-15V,VGS =-4.5V,ID =-3.5A _N-Ch
Q_gd
P-Ch
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
N-Channel
V_DD=10V,R_L=10Ω, I_D ≈1A,
V_GEN=10V,R_G=6Ω
P-Channel
V_DD=-10V,R_L=10Ω, I_D ≈-1A,
V_GEN=-10V,R_G=6Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Source- Drain
Reverse Recovery Time
I_F=1.25A,di/dt=100A/µs
trr
I_F=-1.25A,di/dt=100A/µs
Notes :
a. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
N-Ch
P-Ch
b. Guaranteed by design, not subject to production testing.
Min Typ Max Units
0.6
1.2
V
-0.6
-1.2
±100 nA
1
-1
µA
25
-25
30
A
-30
0.023 0.030
0.040 0.050
Ω
0.032 0.040
0.061 0.090
4
S
5
0.65 1.2
V
0.72 -1.2
25
25
3.0
nC
3.5
3.3
3.5
50
50
80
60
100
ns
100
40
40
60
100
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2
E,May,2015