CJS6562 Datasheet, PDF (1/6 Pages) ZP Semiconductor – Plastic-Encapsulate Transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TSSOP-8 Plastic-Encapsulate Transistors
CJS6562
P-channel
V_(BR)DSS
-20V
N- and P-Channel 12-V(G-S) MOSFET
R_DS(on)MAX
50 mΩ@-4.5V
90mΩ@-2.5V
I_D
-3.5A
N-channel
V_(BR)DSS
20V
R_DS(on)MAX
30mΩ@ _4.5V
40mΩ@2.5V
I_D
4.5A
TSSOP8
MARKING
Equivalent Circuit
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J=150℃)^a
Ta=25℃
Ta=70℃
Pulsed Drain Current
Continuous Source Current(Diode Conduction)^a
Power Dissipation ^a
Maximum Junction-to-Ambient^a
Ta=25℃
Ta=70℃
Operating Junction and Storage Temperature
Notes :
a. Surface Mounted on FR4 board, t≤10S
Symbol
V_DS
V_GS
I_D
I_DM
I_S
P_D
R_thJA
T_J, T_stg
N-Channel
20
±12
4.5
3.6
30
1.25
P-Channel
-20
±12
-3.5
-2.7
-30
-1.25
1.0
0.64
125
-55 ~150
Unit
V
A
W
℃/W
℃
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1
E,May,2015