CJP02N80 Datasheet, PDF (2/4 Pages) ZP Semiconductor – N -Channe l Power MOSFET

MOSFET ELECTRICAL CHARACTERISTICS
T_a=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min Typ Max Unit
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
800
V
Zero gate voltage drain current
Gate-body leakage current
I_DSS
VDS =800V, VGS =0V
I_GSS
VDS =0V, VGS =±30V
10
µA
±100 nA
On characteristics
Gate-threshold voltage
VGS(th) VDS =V_GS, ID =250µA
3
4
5
V
Static drain-source on-resistance
RDS(on) VGS =10V, ID =1.2A
4.5 6.3
Ω
Forward transconductance (note2)
gfs
VDS =50V, ID =1.2A
1.5 2.65
S
Dynamic characteristics (note 3)
Input capacitance
C_iss
550
Output capacitance
C_oss VDS =25V,VGS =0V,f =1MHz
60
pF
Reverse transfer capacitance
C_rss
7
Switching characteristics (note 2,3)
Turn-on delay time
td(on)
35
Turn-on rise time
Turn-off delay time
tr
td(off)
V_DD=400V, R_G=25Ω, ID =2.4A
70
ns
60
Turn-off fall time
tf
65
Total Gate Charge
Q_g
15
nC
Gate-Source Charge
Q_gs VDS =640V,VGS =10V,ID =2.4A
2.6
nC
Gate-Drain Charge
Q_gd
6
nC
Drain-Source Diode Characteristics
Drain-source diode forward voltage
VSD VGS = 0V, IS =2.4A
1.4
V
Continuous drain-source diode forward
I_S
current
2.4
A
Pulsed drain-source diode forward current
I_SM
9.6
A
Notes :
1. I_L=2.4A, V_DD=50V, R_G=25Ω,Starting T_J=25℃.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. Guaranteed by design, not subject to production
www.cj-elec.com
2
B,Apr,2016