CJP02N80 Datasheet, PDF (1/4 Pages) ZP Semiconductor – N -Channe l Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP02N80
V_(BR)DSS
800V
N-Channel Power MOSFET
R_DS(on)MAX
6.3Ω@10V
I_D
2.4A
TO-220-3L
GENERAL DESCRIPTION
The CJP02N80 is an N-channel mode power MOSFET _{1. GATE}
using advanced technology to provide costomers with planar stripe. 2. DRAIN
This technology specializes in allowing a minimum on-state ^{3. SOURCE}
1_{2 3}
resistance and superior switching performance. It also can
withstand high energy pulse in the avalanche and commutation
mode. The CJP02N80 is universally applied in high efficiency
switch mode power supply.
FEATURE
z Excellent package for good heat dissipation
z High switching speed
z 100% avalanche tested
APPLICATION
z Power switching application
z DC/DC converters
MARKING
EQUIVALENT CIRCUIT
CJP02N80= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
Value
800
±30
2.4
9.6
180
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
B,Apr,2016