CJL2623 Datasheet, PDF (2/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Dual P-Channel MOSFET

MOSFET ELECTRICAL CHARACTERISTICS
T_a=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-30V,VGS = 0V
Gate-body leakage current
IGSS
VGS =±20V, VDS = 0V
Gate threshold voltage
VGS(th) VDS =V_GS, ID =-250µA
Drain-source on-resistance (note 3)
RDS(on)
VGS =-10V, ID =-3A
VGS =-4.5V, ID =-2A
Forward tranconductance
gFS
VDS =-5V, ID =-2A
Diode forward voltage (note 3)
V_SD
I_S=-1A, VGS = 0V
DYNAMIC PARAMETERS(note 4)
Input Capacitance
C_iss
Output Capacitance
Reverse Transfer Capacitance
C_oss
C_rss
VDS =-25V,VGS =0V,f =1MHz
SWITCHING PARAMETERS (note 3,4)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
V_DD=-15V,V_GS=-10V,I_D=-1A
R_D=15Ω,R_G=3.3Ω
Turn-off fall time
tf
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
VDS =-24V,VGS =-4.5V,ID=-2A
Gate-Drain Charge
Q_gd
Notes : 3. Pulse Test : Pulse width≤300μs, duty cycle≤2%.
4. Graranted by design，not subject to production testing.
Min Typ Max Unit
-30
V
-1
µA
±100 nA
-1
-3
V
130 mΩ
180 mΩ
2
S
-1.2
V
240 pF
42
pF
32
pF
5
ns
6
ns
15
ns
3
ns
4.5
nC
0.5
nC
1.4
nC
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2
C,May,2015