CJL2623 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Dual P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETs
CJL2623 Dual P-Channel MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
-30 V
130mΩ@-10V
-3 A
180mΩ@-4.5V
SOT-23-6L
FEATURE
z TrenchFET Power MOSFET
z Low Gate Charge
z Low On-resistance
z Surface Mount Package
MARKING:
6
APPLICATION
z DC/DC converter
z Load switch for portable devices
z Commercial-industrial applications
Equivalent Circuit
1
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current (note 1)
I_DM
Power Dissipation (note 2)
P_D
Thermal Resistance from Junction to Ambient
R_θJA
Junction Temperature
T_J
Storage Temperature
T_STG
Notes : 1. Pulse width limited by Max.junction temperature.
2.Per element must not be exceeded
Value
-30
±20
-3
-20
0.35
357
150
-55~ 150
Unit
V
V
A
A
W
℃/W
℃
℃
www.cj-elec.com
1
C,May,2015