CJAC50P03 Datasheet, PDF (2/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel Power MOSFET

MOSFET ELECTRICAL CHARACTERISTICS
T_a=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR) DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-30V, VGS =0V
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
On characteristics (note1)
Gate-threshold voltage
VGS(th) VDS =VGS, ID =-250µA
Static drain-source on-sate resistance
RDS(on) VGS =-10V, ID =-10A
Forward transconductance
gFS
VDS =-10V, ID =-15A
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VDS =-15V,VGS =0V,
f =1MHz
Switching characteristics (note 2)
Total gate charge
Gate-source charge
Gate-drain charge
Qg
VDS=-15V, VGS=-10V,
Qgs
ID=-10A
Qgd
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
VDD=-15V,ID=-10A,
VGS=-10V,RG=6Ω
Turn-off fall time
tf
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
VSD
Continuous drain-source diode forward
IS
current(note3)
Pulsed drain-source diode forward current
ISM
Notes:
1. Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
2. Guaranteed by design, not subject to production.
3. Surface Mounted on FR4 Board, t ≤ 10 sec.
VGS =0V, IS=-10A
Min Typ
Max Unit
-30
V
-1
µA
±100
nA
-1.0 -1.5
-2.5
V
4.4
7
mΩ
20
S
3590
695
pF
665
84
11.7
nC
25
13
12
ns
50
14
-0.85
-1.2
V
-50
A
-70
A
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2
A-5,Mar,2016