CJAC50P03 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFN:%5×6-8L Plastic-Encapsulate MOSFETS
CJAC50P03 P-Channel Power MOSFET
V_(BR)DSS
R_DS(on)MAX
-30V
7mΩ@ -10V
I_D
-50A
PDFN:%5×6-8L
DESCRIPTION
The CJAC50P03 uses advanced trench technology and design
to provide excellent R_DS(ON) with low gate charge. It can be used in a
wide variety of applications
FEATURES
 High density cell design for ultra low R_DS(ON)
 Fully characterized avalanche voltage and
 Excellent package for good heat dissipation
 Special process technology for high ESD
current
 Good stability and uniformity with high E_AS
APPLICATIONS
capability
 Battery and loading switching
MARKING
CJAC50P03 = Part No.
EQUIVALENT CIRCUIT
D
D
D
D
8
7
6
5
Solid dot=Pin1 indicator
XXX=Date Code
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
1
2
3
4
S
S
S
G
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID(1)
Pulsed Drain Current
Single Pulsed Avalanche Energy
IDM
EAS(2)
Power Dissipation
Thermal Resistance from Junction to Ambient
PD
RθJA(1)
Junction Temperature
TJ
Storage Temperature Range
Tstg
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
(1).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
(2).EAS condition: VDD=15V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
Limit
-30
±20
-50
-70
300
2
62.5
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
www.cj-elec.com
1
A-5,Mar,2016