CJ3407 Datasheet, PDF (2/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

MOSFET ELECTRICAL CHARACTERISTICS
T_a=25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Static characteristics
Drain-source breakdown voltage
BVDSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-24V,VGS = 0V
Gate-source leakage current
IGSS
VGS =±20V, VDS = 0V
Drain-source on-resistance (note 1)
RDS(on)
VGS =-10V, ID =-4.1A
VGS =-4.5V, ID =-3A
Forward tranconductance (note 1)
gFS
VDS =-5V, ID =-4A
Gate threshold voltage
Diode forward voltage (note 1)
VGS(th)
V_SD
VDS =V_GS, ID =-250µA
I_S=-1A,V_GS=0V
Dynamic characteristics (note 2)
Input capacitance
Ciss
Output capacitance
Coss
VDS =-15V,VGS =0V,f =1MHz
Reverse transfer capacitance
Crss
Switching Characteristics (note 2)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
V_GS=-10V,V_DS=-15V,
R_L=3.6Ω,R_GEN=3Ω
Turn-off fall time
tf
Notes:
1. Pulse test: Pulse width ≤300µs, duty cycle ≤2%.
2. These parameters have no way to verify.
Min Typ Max Units
-30
V
-1
µA
±100 nA
50
60
mΩ
68
87
mΩ
5.5
S
-1 -1.4
-3
V
-1
V
700
pF
120
pF
75
pF
8.6
ns
5.0
ns
28.2
ns
13.5
ns
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2
D,Aug,2015