CJ3407 Datasheet, PDF (1/5 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETS
CJ3407 P-Channel Enhancement Mode Field Effect Transistor
V_(BR)DSS
-30 V
R_DS(on)MAX
60mΩ@^-10V
87mΩ@-4.5V
I_D
-4.1A
SOT-23
1. GATE
2. SOURCE
3. DRAIN
General Description
The CJ3407 uses advanced trench technology to provide excellent
R_DS(on) with low gate charge. This device is suitable for use as a load
switch or in PWM applications.
MARKING
Equivalent Circuit
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_J
T_stg
Value
-30
±20
-4.1
350
357
150
-55~+150
Unit
V
V
A
mW
℃/W
℃
℃
www.cj-elec.com
1
D,Aug,2015