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| BC856W Datasheet, PDF (2/5 Pages) NXP Semiconductors – PNP general purpose transistors | |||
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ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
BC856W
BC857W
BC858W
BC856W
BC857W
BC858W
Symbol T est conditions
VCBO IC= -10μA, IE=0
VCEO IC= -10mA, IB=0
VEBO IE= -1μA, IC=0
Collector cut-off current
DC current gain
BC856AW, 857AW,858AW
BC856BW, 857BW,858BW
BC857CW,BC858CW
Collector-emitter saturation voltage
ICBO
hFE
VCE(sat)
VCB= -30 V , IE=0
VCE= -5V, IC= -2mA
IC=-100mA, IB= -5mA
Base-emitter saturation voltage
VBE(sat) IC= -100mA, IB= -5mA
Transition frequency
fT
VCE= -5V, IC= -10mA
f=100MHz
Min Max
Unit
-80
-50
V
-30
-65
-45
V
-30
-5
V
-15
nA
125
250
220
475
420
800
-0.65
V
-1.1
V
100
MHz
Collector capacitance
Cob
VCB=-10V, f=1MHz
4.5
pF
www.cj-elec.com
2
CA,JSuenp,,22001144
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