BC856W Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP general purpose transistors

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
JC(T
BC856W
BC857W
BC858W
SOT-323 Plastic-Encapsulate Transistors
TRANSISTOR (PNP)
SOT-323
FEATURES
y Ideally suited for automatic insertion
y For Switching and AF Amplifier Applications
1. BASE
2. EMITTER
3. COLLECTOR
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
RΘJA
T_J
T_stg
Parameter
Collector-Base Voltage
BC856W
BC857W
BC858W
Collector-Emitter Voltage
BC856W
BC857W
BC858W
Emitter-Base Voltage
Collector Current –Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value Unit
-80
V
-50
-30
-65
-45
-30
-5
-0.1
150
833
150
-65～+150
V
V
A
mW
℃/W
℃
℃
DEVICE MARKING
BC856AW= 3A; BC856BW= 3B;
BC857AW=3E; BC857BW=3F;BC857CW=3G;
BC858AW=3J; BC858BW=3K; BC858CW=3L
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