 English |
|
|
|
|
|
|
|
| BAS70 Datasheet, PDF (2/4 Pages) NXP Semiconductors – Schottky barrier double diodes | |||
| |||
| ◁ |
Typical Characteristics
100
Pulsed
Forward Characteristics
10
T
=100â
a
1
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
FORWARD VOLTAGE VF (V)
10
Pulsed
Reverse Characteristics
Ta=100â
1
0.1
Ta=25â
0.01
0
10
20
30
40
50
60
70
REVERSE VOLTAGE VR (V)
Capacitance Characteristics
3.0
Ta=25â
f=1MHz
2.5
2.0
1.5
1.0
0.5
0.0
0
5
10
15
20
REVERSE VOLTAGE VR (V)
300
250
200
150
100
50
0
0
Power Derating Curve
25
50
75
100
125
AMBIENT TEMPERATURE Ta (â)
www.cj-elec.com
2
E,Oct,2015
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese