BAS70 Datasheet, PDF (1/4 Pages) NXP Semiconductors – Schottky barrier double diodes

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
BAS70/-04/-05/-06 SWITCHING DIODE
FEATURES
z Low turn-on voltage
z Fast switching
z Also available in lead free version
SOT-23
BAS70 Marking: 73
MARKING:
BAS70
BAS70-04 Marking: 74
BAS70-04
BAS70-05 Marking: 75
BAS70-05
BAS70-06 Marking: 76
BAS70-06
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS @T a=25℃
Symbol
Parameter
V_R
DC Voltage
I_F
Forward Continuous Current
I_FSM
Non-Repetitive Peak Forward Surge Current @ t = 8.3ms
P_D
Power Dissipation
RθJA
Thermal Resistance Junction to Ambient
T_J
Junction Temperature
T_stg
Storage Temperature
Value
70
70
100
200
500
125
-55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse voltage leakag e current
Forward voltage
Diode cap acitance
Reveres recovery time
Symbol
Test conditions
Min
V_(BR)
I_R= 10µA
70
I_R
V_R=50V
V_F
I_F=1mA
I_F=15mA
C_D
V_R=0V f=1MHz
I_F=I_R=10mA,I_rr=0.1xI_R,
t_rr
R_L=100Ω
Unit
V
mA
mA
mW
℃/W
℃
℃
Max
100
410
1000
2
5
Unit
V
nA
mV
pF
ns
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1
E,Oct,2015