2SD965 Datasheet, PDF (2/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

Typical Characteristics
900
800
700
600
500
400
300
200
100
0
0
2000
Static Characteristic
1.8mA
1.6mA
1.4mA
COMMON
EMITTER
T =25℃
a
1.2mA
1mA
0.8mA
0.6mA
0.4mA
I =0.2mA
B
2
4
6
8
10
12
14
16
18
20
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V
——
BEsat
I
C
h —— I
FE
C
1000
T =100 oC
a
T =25 oC
a
100
0.6 1
1
V =2V
CE
10
100
1000
5000
COLLECTOR CURRENT I (mA)
C
V
——
CEsat
I
C
1000
T =25℃
a
T =100℃
a
100
0.3
1
5000
1000
β=30
10
100
1000
5000
COLLECTOR CURRENT I (mA)
C
V ——
BE
I
C
100
T =100 oC
a
10
T =25℃
a
1
V =2V
CE
0.1
100 200 300 400 500 600 700 800 900 1000 1100 1200
BASE-EMMITER VOLTAGE V (mV)
BE
f —— I
500
T
C
100
10
2
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10
COLLECTOR CURRENT I (mA)
C
V =6V
CE
T =25 oC
a
100
2
0.1
T =100℃
a
T =25℃
a
0.01
0.3
1
500
100
β=30
10
100
1000
5000
COLLECTOR CURRENT I (mA)
C
C / C ——
ob ib
V /V
CB EB
f=1MHz
I =0/ I =0
E
C
T =25 oC
a
C
ib
C
ob
10
0.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
1
10
20
REVERSE VOLTAGE V (V)
P —— T
c
a
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
C,Oct,2015