2SD965 Datasheet, PDF (1/4 Pages) Panasonic Semiconductor – Silicon NPN epitaxial planer type(For low-frequency power amplification)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SD965 TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Low Collector-Emitter Saturation Voltage
z Large Collector Power Dissipation and Current
z Mini Power Type Package
1. BASE
2. COLLECTOR
3. EMITTER
0$5.,1*: 965
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
20
7
5
750
167
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
Min Typ
V_(BR)CBO I_C=100µA,I_E=0
40
V_(BR)CEO I_C=1mA,I_B=0
20
V_(BR)EBO I_E=10µA,I_C=0
7
I_CBO
V_CB=10V,I_E=0
I_EBO
V_EB=7V,I_C=0
h_FE(1)
V_CE=2V, I_C=1mA
200
h_FE(2)
V_CE=2V, I_C=500mA
230
h_FE(3)
V_CE=2V, I_C=2A
150
V_CE(sat) I_C=3A,I_B=0.1A
f_T
VCE=6V,IC=50mA，f=200MHz
150
C_ob
V_CB=20V, I_E=0, f=1MHz
Max
0.1
0.1
800
1
50
CLASSIFICATION OF h_FE(₂)
RANK
RANGE
Q
230–380
R
340–600
S
560–800
Unit
V
V
V
µA
µA
V
MHz
pF
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1
C,Oct,2015