2SD1761 Datasheet, PDF (2/3 Pages) Rohm – TRIPLE DIFFUSED PLANAR NPN SILICON TRANSISTOR

Typical Characteristics
Static Characteristic
1.1
COMMON EMITTER
1.0 T =25℃
a
6.0mA
5.4mA
0.8
4.8mA
4.2mA
0.6
3.6mA
3.0mA
0.4
2.4mA
1.8mA
0.2
1.2mA
0.0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE
I =0.6mA
B
5
6
V (V)
CE
1200
β=10
V
—— I
BEsat
C
1000
800
600
T =25℃
a
T =100 ℃
a
400
200
0.1
1
10
100
COLLECTOR CURREMT I (mA)
C
3000
1000
I —— V
C
BE
COMMON EMITTER
V =5V
CE
1000 3000
100
10
1
0.1
0
10000
1000
100
200
400
600
800
BASE-EMMITER VOLTAGE V (mV)
BE
C /C —— V /V
ob ib
CB EB
1000
f=1MHz
I =0/I =0
E
C
T =25 ℃
a
C
ib
C
ob
10
0.1
1
10
35
REVERSE VOLTAGE V (V)
1000
h —— I
FE
C
COMMON EMITTER
V = 5V
CE
T =100℃
a
T =25℃
a
100
10
0.3
1
1000
β=10
10
100
COLLECTOR CURRENT I (mA)
C
V
——
CEsat
I
C
1000
3000
100
T
=100
a
℃
T
=25^℃
a
10
1
1
100
10
100
COLLECTOR CURRENT I (mA)
C
f —— I
T
C
1000
3000
10
1
10
2.5
COMMON EMITTER
VCE=5V
T =25℃
a
100
200
300
400
500
600
700
COLLECTOR CURRENT I (mA)
C
P —— T
C
a
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
www.cj-elec.com
2
D,May,2016