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| 2SD1761 Datasheet, PDF (1/3 Pages) Rohm – TRIPLE DIFFUSED PLANAR NPN SILICON TRANSISTOR | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
2SD1761 TRANSISTOR (NPN)
FEATURES
z Low Collector Saturation Voltage:
Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
z Excellent Current Characteristics of DC Current Gain.
z Large Collector Power Dissipation: PC=30W(TC=25â)
z Complementary Pair with 2SB1187
TO-220F
1. BASE
2. COLLECTOR
3. EMITTER
123
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
VCEO
Collector-Base Voltage
Collector-Emitter Voltage
80
V
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
PC
Collector Power dissipation
3
A
2
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55-150
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol Test conditions
Min
Typ
Max Unit
Collector-base breakdown voltage
V(BR)CBO IC=50uA, IE=0
80
V
Collector-emitter breakdown voltage
V(BR)CEO IC=1mA,IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO IE=50uA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
10
uA
Emitter cut-off current
IEBO
VEB=4V,IC=0
10
uA
DC current gain
hFE(1) VCE=5V,IC=0.5A
60
320
Collector-emitter saturation voltage
VCE(sat) IC=2A,IB=0.2A
1
V
Base-emitter saturation voltage
VBE(sat) IC=2A,IB=0.2A
1.5
V
Transition frequency
fT
VCE=5V,IC=0.5A
8
MHz
Collector output capacitance
Cob
VCB=10V,IE=0,f=1MHz
90
pF
CLASSIFICATION OF hFE(1)
Rank
Range
D
60-120
E
100-200
F
160-320
www.cj-elec.com
1
D,May,2016
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