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| 2SC5658 Datasheet, PDF (2/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor | |||
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Typical Characteristics
7
6
5
4
3
2
1
0
0
2000
Static Characteristic
20uA
18uA
COMMON
EMITTER
Ta=25â
16uA
14uA
12uA
10uA
8uA
6uA
4uA
IB=2uA
1
2
3
4
5
6
7
8
COLLECTOR-EMITTER VOLTAGE VCE (V)
VBEsat ââ IC
1000
Ta=25â
Ta=100 â
100
0.1
150
100
1
10
COLLECTOR CURREMT IC (mA)
IC ââ VBE
β=10
100 150
1000
hFE ââ IC
Ta=100â
Ta=25â
100
10
0.1
300
COMMON EMITTER
VCE= 6V
1
10
COLLECTOR CURRENT IC (mA)
100 150
VCEsat ââ
IC
100
10
0.1
1000
Ta=100 â
Ta=25â
1
10
COLLECTOR CURREMT IC (mA)
fT ââ IC
β=10
100 150
100
10
1
0.0
50
10
1
0.1
0.1
www.cj-elec.com
COMMON EMITTER
VCE=6V
0.3
0.6
0.9
1.2
BASE-EMMITER VOLTAGE VBE (V)
Cob/Cib ââ VCB/VEB
Cib
f=1MHz
IE=0/IC=0
Ta=25 â
Cob
1
REVERSE VOLTAGE V (V)
10
20
2
10
1
125
100
75
50
25
0
0
COMMON EMITTER
VCE=12V
Ta=25â
10
100
COLLECTOR CURRENT IC (mA)
PC ââ Ta
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (â)
D,Nov,2014
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