2SC5658 Datasheet, PDF (1/4 Pages) SeCoS Halbleitertechnologie GmbH – NPN Plastic Encapsulated Transistor

JIANGSUCHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate Transistors
2SC5658 General purpose transistors (NPN)
FEATURES
z Low C_ob
z Complements the 2SA2029
Marking: BQ,BR,BS
SOT-723
1. BASE
2. EMITTER
3. COLLECTOR
Absolute maximum ratings (Ta=25 ℃unless otherwise noted)
Symbol
Parameter
Limit
Unit
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction temperature
Storage Temperature
60
V
50
V
7
V
150
mA
100
mW
150
℃
-55~+150
℃
Electrical characteristics (T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
I_C=50μA,I_E=0
I_C=1mA,I_B=0
I_E=50μA,I_C=0
V_CB=60V,I_E=0
V_EB=7V,I_C=0
V_CE=6V,I_C=1mA
I_C=50mA,I_B=5mA
V_CE=12V,I_C=2mA, f=100MHz
V_CB=12V,I_E=0, f=1MHz
Classification of h_FE
Rank
Range
Q
120~270
R
180~390
Min Typ Max Unit
60
V
50
V
7
V
0.1
μA
0.1
μA
120
560
0.4
V
180
MHz
3.5
pF
S
270~560
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1
D,Nov,2014