2SC4116 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

Typical Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1000
Static Characteristic
20uA
18uA
16uA
COMMON
EMITTER
T =25℃
a
14uA
12uA
10uA
8uA
6uA
4uA
I =2uA
B
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V —— I
CEsat
C
β=10
h —— I
FE
C
300
T =100℃
a
200
T =25℃
a
120
80
COMMON EMITTER
V =6V
CE
50
0.3
1
10
COLLECTOR CURRENT I (mA)
C
1000
V ——
BEsat
I
C
100 150
100
10
0.1
11
4
T =100℃
a
T =25℃
a
1
10
COLLECTOR CURRENT I (mA)
C
C /C
ob
ib
—— V / V
CB
EB
C
ib
100 150
f=1MHz
I =0 / I =0
E
C
T =25℃
a
C
ob
800
T =25℃
a
T =100℃
a
600
400
0.1
300
V =10V
CE
T =25℃
a
1
10
COLLECTOR CURRENT I (mA)
C
f ——
T
I
C
100
β=10
100 150
30
1
1
125
10
3
10
1
REVERSE VOLTAGE V (V)
P —— T
c
a
100
75
50
25
0
0
25
www.cj-elec.com
50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
150
2
10
60
COLLECTOR CURRENT I (mA)
C
AC,JSuenp,,22001144