2SC4116 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
2SC4116 TRANSISTOR (NPN)
SOT-323
FEATURES
z High voltage and high current
z Excellent h_FE linearity
z High h_FE
z Low noise
z Complementary to 2SA1586
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
50
VEBO Emitter-Base Voltage
5
IC
Collector Current
150
PC
Collector Power Dissipation
100
RΘJA Thermal Resistance From Junction To Ambient
1250
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test conditions
Min
V_(BR)CBO I_C=100μA,I_E=0
60
V_(BR)CEO I_C=1mA,I_B=0
50
V_(BR)EBO I_E=100μA,I_C=0
5
I_CBO
V_CB=60V,I_E=0
I_EBO
V_EB=5V,I_C=0
h_FE
V_CE=6V,I_C=2mA
70
V_CE(sat) I_C=100mA,I_B=10mA
f_T
V_CE=10V,I_C=1mA,
80
C_ob
V_CB=10V,I_E=0,f=1MHz
V_CE=6V,I_c=0.1mA,
NF
f=1KH_Z,Rg=10KΩ
Typ Max Unit
V
V
V
0.1
μA
0.1
μA
700
0.25
V
MHz
3.5
pF
10
dB
CLASSIFICATION OF h_FE
Rank
Range
Marking
O
70-140
LO
Y
120-240
LY
GR
200-400
LG
BL
350-700
LL
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