2SC2881 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Typical Characteristics
Static Characteristic
150
800uA
720uA
COMMON
EMITTER
T =25℃
a
640uA
100
560uA
480uA
400uA
50
320uA
240uA
160uA
I =80uA
B
0
0
1
2
3
4
5
6
7
8
9 10 11 12
COLLECTOR-EMITTER VOLTAGE V (V)
CE
V —— I
1200
BEsat
C
1000
800
600
400
200
1
800
T =25℃
a
T =100℃
a
10
100
COLLECTOR CURRENT I (mA)
C
I —— V
C
BE
β=10
800
600
400
200
0
200
100
T =100 oC
a
T =25℃
a
400
600
800
BASE-EMITTER VOLTAGE
V =5V
CE
1000
V (mV)
BE
1200
f
T
——
I
C
1000
100
h —— I
FE
C
T =100 oC
a
T =25 oC
a
10
1
1
300
250
200
150
100
50
0
1
1000
100
10
100
COLLECTOR CURRENT I (mA)
C
V —— I
CEsat
C
V = 5V
CE
800
β=10
T =100℃
a
T =25℃
a
10
100
800
COLLECTOR CURRENT I (mA)
C
C / C —— V / V
ob
ib
CB
EB
C
ib
f=1MHz
I =0 / I =0
E
C
T =25 oC
a
10
1
0.1
0.75
C
ob
1
10
20
REVERSE VOLTAGE V (V)
P —— T
c
a
80
60
40
20
20
50
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V =5V
CE
T =25 oC
a
100
150
COLLECTOR CURRENT I (mA)
C
200
2
0.50
0.25
0.00
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
D,Oct,2015