2SC2881 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate Transistors
2SC2881 TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Small Flat Package
z High Transition Frequency
z High Voltage
z Complementary to 2SA1201
APPLICATIONS
z Power Amplifier and Voltage Amplifier
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
120
120
5
800
500
250
150
-55~+150
1. BASE
2. COLLECTOR
3. EMITTER
Unit
V
V
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
Test conditions
I_C=1mA,I_E=0
I_C=10mA,I_B=0
I_E=1mA,I_C=0
V_CB=120V,I_E=0
V_EB=5V,I_C=0
V_CE=5V, I_C=100mA
I_C=500mA,I_B=50mA
V_CE=5V, I_C=0.5A
VCE=5V,IC=100mA
V_CB=10V, I_E=0, f=1MHz
Min Typ
120
120
5
80
120
Max
0.1
0.1
240
1
1
30
Unit
V
V
V
µA
µA
V
V
MHz
pF
CLASSIFICATION OF h_FE
RANK
O
RANGE
80–160
MARKING
CO1
Y
120–240
CY1
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1
D,Oct,2015