2SC2412 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

Typical Characteristics
V ——
CE
I
C
5
20uA
COMMON
18uA
EMITTER
4
16uA
T_a=25℃
14uA
3
12uA
10uA
2
8uA
6uA
1
4uA
I_B=2uA
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE V_CE (V)
V
—— I
CEsat
C
300
100
T =100 ℃
a
T_a=25℃
500
100
10
0.1
1000
800
600
h —— I
FE
C
T_a=100℃
T_a=25℃
COMMON EMITTER
V_CE= 6V
1
10
COLLECTOR CURRENT I_C (mA)
100 150
V —— I
BEsat
C
T_a=25℃
T_a=100 ℃
10
0.1
150
100
1
10
COLLECTOR CURREMT I_C (mA)
I —— V
C
BE
β=10
100 150
10
400
0.1
300
100
1
10
COLLECTOR CURREMT I_C (mA)
f ——
T
I
C
β=10
100 150
COMMON EMITTER
V_CE=6V
1
0
300
600
900
1200
COLLECTOR CURRENT I_C (mA)
50
C /C ——
ob ib
V /V
CB EB
f=1MHz
I_E=0/I_C=0
T_a=25 ℃
C_ib
10
C_ob
1
0.1
www.cj-elec.com
1
REVERSE VOLTAGE V (V)
10
20
2
10
0.5
1
250
COMMON EMITTER
V_CE=12V
T_a=25℃
10
100
COLLECTOR CURRENT I_C (mA)
P —— T
C
a
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE T_a (℃)
BA,JOucnt,2014