2SC2412 Datasheet, PDF (1/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T ^{SOT-23 Plastic-Encapsulate Transistors}
2SC2412 TRANSISTOR (NPN)
SOT-23
FEATURES
· Low C_ob ,C_ob = 2.0 pF (Typ).
MARKING : BQ, BR, BS
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO Collector-Base Voltage
60
VCEO Collector-Emitter Voltage
50
VEBO Emitter-Base Voltage
7
IC
Collector Current
150
PC
Collector Power Dissipation
200
RΘJA Thermal Resistance From Junction To Ambient
625
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55～+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V_(BR)CBO I_C=50μA,I_E=0
V_(BR)CEO I_C=1mA,I_B=0
V_(BR)EBO I_E=50μA,I_C=0
I_CBO
V_CB=60V,I_E=0
I_EBO
V_EB=7V,I_C=0
h_FE
V_CE=6V,I_C=1mA
V_CE(sat) I_C=50mA,I_B=5mA
f_T
V_CE=12V,I_C=-2mA,f=100MHz
C_ob
V_CB=12V,I_E=0,f=1MHz
Min Typ Max Unit
60
V
50
V
7
V
0.1
μA
0.1
μA
120
560
0.4
V
160
MHz
2.0
3.5
pF
CLASSIFICATION OF h_FE
Rank
Range
Marking
Q
120 - 270
BQ
R
180 - 390
BR
S
270 - 560
BS
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BA,JOucnt,2014