2SA1225 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Typical Characteristics
-150
COMMON
EMITTER
T =25℃
a
-120
Static Characteristic
-90
-1mA
-0.9mA
-0.8mA
-0.7mA
-0.6mA
-0.5mA
-60
-0.4mA
-0.3mA
-30
-0.2mA
I =-0.1mA
B
-0
-0
-1
-2
-3
-4
-5
-6
-7
COLLECTOR-EMITTER VOLTAGE V (V)
CE
-1000
β=10
V —— I
BEsat
C
-800
T =25℃
a
-600
T =100 ℃
a
-400
h —— I
1000
FE
C
COMMON EMITTER
V = -5V
CE
T =100℃
a
100
T =25℃
a
10
-1
-500
β=10
-10
-100
COLLECTOR CURRENT I (mA)
C
V
—— I
CEsat
C
-1000 -1500
T =100 ℃
a
-100
T =25℃
a
-200
-0.1
-1
-10
-100
COLLECTOR CURREMT I (mA)
C
-1500
-1000
I —— V
C
BE
COMMON EMITTER
V =-5V
CE
-100
-1000 -1500
-10
-10
-0.1
-1
-10
-100
COLLECTOR CURREMT I (mA)
C
f —— I
T
C
300
COMMON EMITTER
V =-10V
CE
T =25℃
a
100
-1000-1500
-1
-0.1
-200
1000
100
10
-0.1
www.cj-elec.com
-400
-600
-800
BASE-EMMITER VOLTAGE V (mV)
BE
-1000
C /C ——
ob ib
V /V
CB EB
C
ib
f=1MHz
I =0/I =0
E
C
T =25 ℃
a
C
ob
-1
-10
REVERSE VOLTAGE V (V)
-30
2
10
-85
1200
1000
800
600
400
200
0
0
-90
-95
-100
-105
-110
COLLECTOR CURRENT I (mA)
C
P —— T
C
a
25
50
75
100
125
150
AMBIENT TEMPERATURE T (℃)
a
D,Mar,2016