2SA1225 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate Transistors
2SA1225 TRANSISTOR (PNP)
FEATURES
z High Transition Frequency
z Complementary to 2SC2983
APPLICATIONS
z Power Amplifier Applications
z Driver Stage Amplifier Applications
TO-252-2L
1. BASE
2. COLLECTOR
3 .EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value Unit
-160
V
-160
V
-5
V
-1.5
A
1
W
150
℃
-55~150
℃
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
* Pulse test
Symbol
V_(BR)CBO
V
*
(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
V_BE
f_T
C_ob
Test conditions
I_C=-1mA ,I_E=0
I_C=-10mA, I_B=0
I_E=-1mA,I_C=0
V_CB=160V,I_E=0
V_EB=-5V,I_C=0
V_CE=-5V, I_C=-0.1A
I_C=-0.5A,I_B=-50mA
V_CE=-5V, I_C=-0.5A
V_CE=-10V ,I_C=-100mA
V_CB=-10V ,I_E=0,f=1MHz
Min Typ Max Unit
-160
V
-160
V
-5
V
-0.1
μA
-0.1
μA
70
240
-1.5
V
-1
V
100
MHz
30
pF
CLASSIFICATION OF h_FE
Rank
Range
O
70-140
Y
120-240
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1
D,Mar,2016