1SS372 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATION)

Typical Characteristics
100
Pulsed
Forward Characteristics
10
=100^℃
T^a
1
0
100
200
300
400
500
FORWARD VOLTAGE V (mV)
F
Capacitance Characteristics
100
T =25℃
a
f=1MHz
10
1
0
5
10
15
20
REVERSE VOLTAGE V (V)
R
1000
Pulsed
100
Reverse Characteristics
T =100℃
a
10
1
T =25℃
a
0.1
0.01
0
120
100
80
60
40
20
0
0
2
4
6
8
10
REVERSE VOLTAGE V (V)
R
Power Derating Curve
25
50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
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2
C,Oct,2015