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| 1SS372 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – DIODE (HIGH SPEED SWITCHING APPLICATION) | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diodes
1SS372
SCHOTTKY BARRIER DIODE
FEATURES
ï¬ Small Package
ï¬ Low Forward Voltage
APPLICATIONS
ï¬ High Speed Switching
MARKING: N9
SOT-323
N9
N9
Solid dot = Green molding compound device,if none, the normal device
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Symbol
Parameter
VR
DC Blocking Voltage
IO
Forward Continuous Current
IFM
Peak Forward Current
IFSM
Non-respetitive Peak Forward Surge Current@t=8.3ms
PD
Power Dissipation
RθJA
Thermal Resistance From Junction To Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
Value
10
100
200
1
100
1000
125
-55~+150
Unit
V
mA
mA
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS(Ta=25â unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Symbol
V(BR)
IR
VF
Ctot
Test conditions
IR=100μA
VR=10V
IF=1mA
IF=5mA
IF=100mA
VR=0V,f=1MHz
Min Typ Max Unit
10
V
20
μA
0.18
0.3
V
0.5
40
pF
www.cj-elec.com
1
C,Oct,2015
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