1SS187 Datasheet, PDF (2/4 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

Typical Characteristics
Forward Characteristics
100
Reverse Characteristics
1000
30
10
3
1
0.3
0.1
0.03
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE V (V)
F
300
100
30
10
3
1
0
Ta=100℃
Ta=25℃
20
40
60
80
REVERSE VOLTAGE V (V)
R
Capacitance Characteristics
1.2
Ta=25℃
f=1MHz
1.1
1.0
0.9
0.8
0
5
10
15
20
REVERSE VOLTAGE V_R (V)
Power Derating Curve
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
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2
B,Aug,2014