1SS187 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
1SS187 Switching Diode
FEATURES
y Low forward voltage
y Fast reverse recovery time
MARKING: D3·
D3
SOT-23
1
3
2
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
V_RM
V_R
I_FM
I_O
I_FSM
P_D
R_θJA
T_J
T_STG
Limit
85
80
300
100
2.0
150
833
150
-55~+150
Unit
V
V
mA
mA
A
mW
℃/W
℃
℃
Electrical Characteristics @Ta=25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V _(BR)
V_F1
V_F2
V_F3
I_R1
I_R2
C_T
t _rr
Min Typ Max Unit
Conditions
80
V I_R=100μA
0.61
V I_F=1mA
0.74
V I_F=10mA
0.92 1.2
0.1
V I_F=100mA
uA V_R=30V
0.5
uA V_R=80V
2.2
4.0
pF V_R=0,f=1MHz
1.6
4.0
ns I_F=I_R=10mA,I_rr=0.1×I_R
www.cj-elec.com
1
B,Aug,2014