IXXR110N65B4H1 Datasheet, PDF (7/7 Pages) IXYS Corporation – XPTTM 650V GenX4TM

IXXR110N65B4H1
200
175
150
125
I_F
100
[A]
75
50
25
0
0
Fig. 21. Typ. Forward characteristics
T_VJ = 25ºC
T_VJ = 150ºC
Fig. 22. Typ. Reverse Recovery Charge Q_rr vs. -di_F/dt
20
T_VJ = 150ºC
V_R = 300V
16
I_F = 200A
Q_RM ¹²
[µC]
8
4
100A
50A
0.5
1
1.5
2
2.5
3
V_F - [V]
0
1000
1200
1400
1600
-di_F/ dt [A/µs]
1800
2000
140
120
100
I_RM
[A] ₈₀
Fig. 23. Typ. Peak Reverse Current I_RM vs. -di_F/dt
T_VJ = 150ºC
V_R = 300V
I_F = 200A
100A
50A
60
350
300
250
t_rr
200
[ns]
150
100
40
1000
1200
1400
1600
di_F/dt [A/µs]
1800
2000
50
1000
Fig. 24. Typ. Recovery Time t_rr vs. -di_F/dt
T_VJ = 150ºC
V_R = 300V
1200
1400
1600
-di_F/dt [A/µs]
I_F = 200A
100A
50A
1800
2000
Fig. 25. Typ. Recovery Energy E_rec vs. -di_F/dt
5
T_VJ = 150ºC
V_R = 300V
4
I_F = 200A
E_rec ³
[mJ]
2
100A
1
50A
Fig. 26. Maximum Transient Thermal Impedance
1
0.1
0.01
0
0.001
1000
1200
1400
1600
1800
2000
0.0001
0.001
0.01
0.1
1
10
-di_F/dt [A/µs]
Pulse Width - Seconds
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IXYS REF: IXX_110N65B4H1(E8) 02-04-13-B