IXXR110N65B4H1 Datasheet, PDF (1/7 Pages) IXYS Corporation – XPTTM 650V GenX4TM

XPT^TM 650V GenX4^TM IXXR110N65B4H1
w/ Sonic Diode
(Electrically Isolated Tab)
Extreme Light Punch Through
IGBT for 10-30kHz Switching
V_CES =
I_C110 =
V ≤ _CE(sat)
t_fi(typ) =
650V
70A
2.20V
85ns
ISOPLUS247^TM
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_F110
I_CM
SSOA
(RBSOA)
t_sc
(SCSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GE = 1MΩ
Continuous
Transient
Maximum Ratings
650
V
650
V
±20
V
±30
V
T_C = 25°C (Chip Capability)
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
150
A
70
A
48
A
460
A
V_GE = 15V, T_VJ = 150°C, R_G = 2Ω
Clamped Inductive Load
I_CM = 220
A
@V_CE ≤ V_CES
V_GE = 15V, V_CE = 360V, T_J = 150°C
R_G = 82Ω, Non Repetitive
10
μs
T_C = 25°C
455
W
-55 ... +175
°C
175
°C
-55 ... +175
°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
°C
260
°C
50/60 Hz, 1 Minute
2500
V∼
Mounting Force
20..120/4.5..27
N/lb
5
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 150°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 110A, V_GE = 15V, Note 1
T_J = 150°C
Characteristic Values
Min. Typ. Max.
650
V
4.0
6.5 V
25 μA
3 μA
±100 nA
1.75
2.15
2.20 V
V
G
CE
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Isolated Mounting Surface}
z _{2500V~ Electrical Isolation}
z _{Optimized for 10-30kHz Switching}
z _{Square RBSOA}
z _{Short Circuit Capability}
z _{Anti-Parallel Sonic Diode}
z _{High Current Handling Capability}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
z _{High Frequency Power Inverters}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100529B(6/13)