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IXGH48N60C3D1 Datasheet, PDF (7/7 Pages) IXYS Corporation – GenX3 600V IGBT with Diode
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IXGH48N60C3D1
60
A
50
IF 40
30
TVJ=150°C
TVJ=100°C
20
10
TVJ=25°C
1000
nC
800
Qr
600
400
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
200
30
A
25
IRM
20
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
15
10
5
0
0
1
2
3V
VF
Fig. 21. Forward current IF versus VF
2.0
1.5
Kf
1.0
0.5
IRM
Qr
0
100
A/μs 1000
-diF/dt
Fig. 22. Reverse recovery charge Qr
versus -diF/dt
90
ns
trr
80
TVJ= 100°C
VR = 300V
IF= 60A
IF= 30A
IF= 15A
70
0
0 200 400 600 A8/0μ0s 1000
-diF/dt
Fig. 23. Peak reverse current IRM
versus -diF/dt
20
V
VFR
15
10
TVJ= 100°C
IF = 30A
tfr
VFR
1.00
μs
tfr
0.75
0.50
5
0.25
0.0
0
40
80
120 °C 160
TVJ
Fig. 24. Dynamic parameters Qr, IRM
versus TVJ
1
K/W
60
0 200 400 600 A8/0μ0s 1000
-diF/dt
Fig. 25. Recovery time trr versus
-diF/dt
0.1
ZthJC
0.01
0
0.00
0 200 400 600 A80/μ0s 1000
diF/dt
Fig. 26. Peak forward voltage VFR
and tfr versus diF/dt
Constants for ZthJC calculation:
i
Rthi (K/W)
ti (s)
1
0.502
2
0.193
3
0.205
0.0052
0.0003
0.0162
0.001
0.00001
0.0001
0.001
0.01
Fig. 27. Transient thermal resistance junction to case
0.1
DSEP 29-06
s
1
t
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