IXGH48N60C3D1 Datasheet, PDF (1/7 Pages) IXYS Corporation – GenX3 600V IGBT with Diode

GenX3^TM 600V IGBT IXGH48N60C3D1
with Diode
High speed PT IGBT for
40-100kHz Switching
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_D110
I_CM
I_A
E_AS
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C (Limited by Leads)
T_C = 110°C
T_C = 110°C
T_C = 25°C, 1ms
T_C = 25°C
T_C = 25°C
V_GE = 15V, T_VJ = 125°C, R_G = 3Ω
Clamped Inductive Load
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque
Maximum Ratings
600
V
600
V
±20
V
±30
V
75
A
48
A
30
A
250
A
30
A
300
mJ
I_CM = 100
A
@V_CE < 600
V
300
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
260
1.13/10
6
°C
°C
Nm/lb.in
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = V_CES
V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ±20V
V_CE(sat)
I_C = 30A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3.0
5.5 V
300 μA
1.75 mA
±100 nA
2.3 2.5 V
1.8
V
V_CES
I_C110
V_CE(sat)
t_fi(typ)
= 600V
= 48A
≤ 2.5V
= 38ns
TO-247
GC
E
( TAB )
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
z _{Optimized for Low Switching Losses}
z _{Square RBSOA}
z _{Anti-Parallel Ultra Fast Diode}
z _{Fast Switching}
z _{Avalanche Rated}
z _{International Standard Package}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Applications
z _{High Frequency Power Inverters}
z _UPS
z _{Motor Drives}
z _SMPS
z _{PFC Circuits}
z _{Battery Chargers}
z _{Welding Machines}
z _{Lamp Ballasts}
© 2009 IXYS CORPORATION, All rights reserved
DS99945A(01/09)